Global Wide-Bandgap Power (WBG) Semiconductor Devices Market 2017-2021
About Wide-bandgap Power Semiconductor Device
Wide-bandgap (WBG) semiconductors are materials that possess significantly greater bandgaps than silicon. For example, diamond, zinc oxide, silicon carbide (SiC), and gallium nitride (GaN) are WBG semiconductors. WBG power semiconductor devices comprise of materials such as SiC and GaN. The bandgap is the difference in the energy between the valence band and conduction band of a solid material.
Technavio’s analysts forecast the global wide-bandgap power semiconductor device market to grow at a CAGR of 37.90% during the period 2017-2021.
Covered in this report
The report covers the present scenario and the growth prospects of the global wide-bandgap power semiconductor device market for 2017-2021. To calculate the market size, the report considers shipments value and excludes revenue generated from aftermarket sales.
The market is divided into the following segments based on geography:
Technavio Announces the Publication of its Research Report – Global Wide-bandgap Power (WBG) Semiconductor Device Market 2017-2021
Technavio recognizes the following companies as the key players in the global wide-bandgap power semiconductor device market: Infineon Technologies, Cree, Transphorm, and ROHM Semiconductor.
Other Prominent Vendors in the market are: Texas Instruments, STMicroelectronics, GaN Systems, Microsemi Corporation, United Silicon Carbide, Exagan, GeneSiC Semiconductor, Monolith Semiconductor, and Qorvo.
Commenting on the report, an analyst from Technavio’s team said: “One trend in the market is consolidation of semiconductor devices. The shift toward digitalization can be seen in industries that are pushing for digital control of power to make drive controls, inverters, and other electrical equipment compatible with IoT.”
According to the report, one driver in the market is rise in demand of energy-efficient electronic products. Governments across different countries are deploying policies such as energy performance labels, general awareness programs, energy performance standards to ensure environmental safety, reduced consumption of energy, and lower utility bills for consumers. These policies and the rise in the costs of energy has compelled manufacturers to take measures to develop energy-efficient products.
Further, the report states that one challenge in the market is high capital investment. WBG semiconductor devices require high capital investment both in terms of money and labor. This is because their manufacturing process is complex compared to silicon-based semiconductor devices. The procedures involved are highly complex and require high-end equipment, which needs heavy investments and highly skilled labor.
Infineon Technologies, Cree, Transphorm, and ROHM Semiconductor.Other Prominent Vendors in the market are: Texas Instruments, STMicroelectronics, GaN Systems, Microsemi Corporation, United Silicon Carbide, Exagan, GeneSiC Semiconductor, Monolith Semiconductor, and Qorvo.
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