Global Radio Frequency Integrated Circuit (RFIC) Market 2017-2021
About Radio Frequency Integrated Circuit (RFIC)
RFICs are the elementary units for components that enable long-range connectivities such as LTE networks and short-range connectivities such as Bluetooth and Wi-Fi in the computing devices. RFICs are predominantly used in devices that perform functions, including amplification, frequency conversion, and signal filtering. RFIC has become one of the most integral components in the wireless infrastructure, owing to its high reliability and operating frequencies. RFICs are used in manufacturing components such as power amplifiers, transceivers, Wi-Fi chips, Bluetooth chips, NFC, and others. With growing demand for wireless infrastructure, RFICs have also witnessed huge demand. Because of the increasing demand from smartphone and tablet manufacturers, transceivers and power amplifiers are the major revenue contributing products in the market. The rising penetration of LTE networks worldwide is compelling the device manufacturers to integrate more number of RFICs, which is expected to fuel the market during the forecast period.
Technavio’s analysts forecast the global radio frequency integrated circuit (RFIC) market to grow at a CAGR of 11.89% during the period 2017-2021.
Covered in this report
The report covers the present scenario and the growth prospects of the global radio frequency integrated circuit (RFIC) market for 2017-2021. To calculate the market size, the report considers the retail selling price as the average selling price (ASP) of the product.
The market is divided into the following segments based on geography:
Technavio Announces the Publication of its Research Report – Global Radio Frequency Integrated Circuit (RFIC) Market 2017-2021
Technavio recognizes the following companies as the key players in the global radio frequency integrated circuit (RFIC) market: Infineon Technologies, Qualcomm, Broadcom (Avago Technologies), Qorvo, Skyworks Solutions, NXP Semiconductors, STMicroelectronics, and Renesas Electronics
Commenting on the report, an analyst from Technavio’s team said: “The latest trend gaining momentum in the market is Growing popularity of RF SOI. SOI technology uses a layered silicon–insulator–silicon substrate instead of conventional silicon substrates in semiconductor manufacturing. This helps improve the performance of microelectronics by reducing parasitic device capacitance. SOI-based devices are different from conventional silicon-built devices, where the silicon junction is above an electrical insulator, generally silicon dioxide or sapphire. These types of devices are called silicon on sapphire (SOS). The choice of insulator largely depends on an intended application where sapphire is used for high-performance RF and radiation-sensitive applications and silicon dioxide is used to create diminished short channel effects in microelectronics devices. The insulating layer and topmost silicon layer vary widely with application.”
According to the report, one of the major drivers for this market is Deployment of next-generation LTE wireless networks. The burst in data consumption has resulted in the adoption of next-generation LTE networks such as 3G and 4G. The growing data consumption has resulted in the growth of commercial networks, making LTE the fastest developing mobile technology. Specific bands have been designated for LTE, but they vary from carrier to carrier.
Further, the report states that one of the major factors hindering the growth of this market is Signal loss due to growing design complexities. The increase in design complexities such as slimmer version, use of metallic case, and larger displays in smartphones resulted in the degradation of radio performance. The efficiency of RF transmission is calculated by the power transmitted by the antenna divided by the power consumed by the power amplifier to generate transmission. A huge amount of signal strength is lost between the antenna and other receivers in the smartphone. As a result, the power amplifier needs to deliver more power to transmit the signal from the antenna, which reduces the radio efficiency up to 75%.
Infineon Technologies, Qualcomm, Broadcom (Avago Technologies), Qorvo, Skyworks Solutions, NXP Semiconductors, STMicroelectronics, and Renesas Electronics
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