Global Phase Change Memory Market 2017-2021
About Phase Change Memory
Phase change memory (PCM) stores data by changing the state of matter from which the device is fabricated. It can exist in two states and is a reversible structural phase. PCM is known to have a fast read access time, good data retention, and high data density. The design of phase changing materials consists of narrow electrodes called the heater, which is placed between the two electrodes. Chalcogenide is a widely-used material in PCM. When chalcogenide is heated and cooled, it retains an amorphous state. This state is highly resistive and represents a logical 0. When amorphous chalcogenide is heated and then cooled rapidly, it changes to a crystalline state, which is less resistive and is represented as logical 1.
Technavio’s analysts forecast the global phase change memory market to grow at a CAGR of 83.98% during the period 2017-2021.
Covered in this report
The report covers the present scenario and the growth prospects of the global phase change memory market for 2017-2021. To calculate the market size, the report considers the revenue generated from the sales of different PCM technologies.
The market is divided into the following segments based on geography:
Technavio Announces the Publication of its Research Report – Global Phase Change Memory Market 2017-2021
Technavio recognizes the following companies as the key players in the global phase change memory market: IBM, Micron Technology, and Samsung Electronics.
Other Prominent Vendors in the market are: HP and BAE Systems.
Commenting on the report, an analyst from Technavio’s team said: “One trend in market is emergence of low power consumption memory modules. Semiconductor technology, which has driven the computer industry, is improving every year. The new computer architecture includes memory and computer elements that merge in a novel way so that the memory and CPU ecosystem are closer physically and operationally.”
According to the report, one driver in market is high scalability and low power consumption. PCM memory modules are more scalable and non-volatile compared with memory modules such as DRAM and MRAM. PCM scalability implies greater write endurance. Non-volatile memories fundamentally change the landscape of computing as they are able to change the physical state from amorphous to crystalline. Another feature of PCM is its low power consumption. These modules use phase change material such as germanium-antimony-tellurium (Ge2Sb2Te5) to change the state from amorphous to crystalline. The low power consumption of PCMs increases the battery life of electronic devices. This allows electronic devices to function for a longer period. It also increases their operating life cycles and reduces their overall maintenance costs. PCM also acts as a hybrid memory module, which combines PCM and flash memory. PCM has a fast cache memory module so that it can retain data. System boot using PCM will be instantaneous, application checkpoint will be inexpensive, and the system will provide stronger safety guarantees. This is expected to lead to the increase in the demand for PCM.
Further, the report states that one challenges in market is need for high programming current density. There is an increased demand for high programming current density (i.e., >107 A/cm² compared with 105-106 A/cm² for a typical transistor). PCM has high write latency and energy, which act as challenges for the operation of the PCM memory module. Phase change is a thermally driven process rather than an electronic process. Thermal conditions that allow for fast crystallization in a PCM material cannot be the same as the standby conditions of the material (at room). This can result in a decrease in data retention. In addition, the contact between the hot phase change region and the adjacent dielectric region of a phase change material begins to leak current at higher temperatures and may also lose adhesion when expanding at a different rate. A PCM material requires proper activation energy for crystallization. It achieves fast crystallization in programming conditions and slow crystallization in normal conditions.
IBM, Micron Technology, Samsung Electronics, HP and BAE Systems.