Global IGBT-based Power Module Market 2016-2020
An IGBT chip has high power efficiency, high blocking voltage, and the ability to work on low power. IGBT and diode dies are combined to form power modules. These are large arrangements of basic building blocks of power electronic equipment. These assembled stacks are configured to cope with the needs of the highest power applications. These modules are used in industrial motors, railroad traction, power supplies, renewable energy, and consumer appliances. These modules are also used to drive electric motors for both automotive and industrial applications.
Technavio’s analysts forecast the global IGBT-based power module market to grow at a CAGR of 8.45% during the period 2016-2020.
Covered in this report
The report covers the present scenario and the growth prospects of the global IGBT-based power module market for 2016-2020. To calculate the market size, the report considers the revenue generated from the sales of IGBT-based power module sensors.
The market is divided into the following segments based on geography:
Technavio Announces the Publication of its Research Report – Global IGBT-Based Power Module Market 2016-2020
Technavio recognizes the following companies as the key players in the global IGBT-based power module market: Fairchild Semiconductor International, Fuji Electric, Infineon Technologies, Mitsubishi, SEMIKRON, and STMicroelectronics.
Commenting on the report, an analyst from Technavio’s team said: “One of the key trends for market growth will be increased demand for copper wire for interconnections. With the increased need for high power ratings for electronic applications such as electric rail tractions and the wind power generators, power semiconductor vendors are increasingly using copper wire for interconnections. The use of copper wire bonding for interconnections provides higher thermal conductivity, higher elastic modulus, higher melting temperature, and higher capacities than aluminum wire bonding for similar boundary conditions. This trend of using copper wire for interconnections will grow at a good pace during the forecast period and have a positive effect on the growth of the IGBT-based power module market.¬¬¬¬¬”
According to the report, one of the key drivers for market growth will be increasing need for higher power density. There is a continuous need for high power density in power electronics to achieve technological advances, especially in high-power applications. For instance, inverter systems, power electronic devices in railroad traction drives, wind power generators, and solar power generators use IGBT-based power modules to increase their operational efficiency. A number of vendors such as Infineon are investing in R&D to develop IGBT-based power modules that have a high power density. IGBTs have more advantages than power MOSFETs and GTOs as they require less power, have simplified circuits, and optimum forward and reverse blocking capabilities.
Further, the report states that occurrence of grid fault in power semiconductor devices will be a challenge for the market. Power semiconductors face the problem of grid fault. One particular challenge for power semiconductors is the need to cope with a grid fault for a specified period of time (fault ride through) — a feature demanded from wind turbines by network operators. In wind turbines with doubly-fed asynchronous generators, in particular, the IGBTs and freewheeling diodes need to be able to cope with high peaks in current and voltage.
Fairchild Semiconductor International, Fuji Electric, Infineon Technologies, Mitsubishi, SEMIKRON, STMicroelectronics.
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