GaAs, which is also known as a compound III-V semiconductor, is used in devices such as infrared LED, monolithic microwave ICs (MMICs), microwave frequency ICs, solar cells, optical windows, and laser diodes. It is increasingly used as a replacement for silicon wafers due to its electronic properties. GaAs has high saturated electron velocity and electron mobility, which allow GaAs devices to function efficiently at frequencies above 250 GHz. Due to the wider band gap, GaAs wafers are less sensitive to heat and emit less noise, especially at higher frequencies, compared to silicon wafers. Due to these properties, they are used in mobile devices, wireless communications, aerospace and defense, and automotive systems.
Technavio’s analysts forecast the global gallium arsenide (GAAS) wafer market to grow at a CAGR of 12.69% during the period 2016-2020.
Covered in this report
The report covers the present scenario and the growth prospects of the global gallium arsenide (GAAS) wafer market for 2016-2020. To calculate the market size, the report considers the revenue generated from the shipment of 6-inch equivalent GaAs wafers to the customers.
The market is divided into the following segments based on geography:
Technavio Announces the Publication of its Research Report – Global Gallium Arsenide (GAAS) Wafer Market 2016-2020
Technavio recognizes the following companies as the key players in the global gallium arsenide (GAAS) wafer market: AWSC, GCS and WIN Semiconductors.
Other Prominent Vendors in the market are: AXT, Century Epitech, Freiberger Compound Materials, Intelligent Epitaxy Technology, IQE, OMMIC, Xiamen Powerway Advanced Material, Qorvo, Sumitomo Electric Semiconductor Materials, UMS¸ and Visual Photonics Epitaxy.
Commenting on the report, an analyst from Technavio’s team said: “Shutdown of 2G network will be a key trend for market growth. High-speed 3G or 4G internet services are easily available worldwide. The data speed of a 4G connection is, on average, ten times more than the speed of a 3G connection. High-speed internet connectivity leads to faster streaming of videos, quicker web browsing, and better performance of GPS. Hence, many countries are opting for 3G and 4G connectivity, which will result in the shutdown of the 2G mobile network by the end of 2016, with its bandwidth being allocated to 3G and 4G mobile networks.”
According to the report, one of the key drivers for market growth will be requirement for increased network bandwidth. The growth in internet bandwidth is fueled by two factors: the proliferation of mobile computing devices with advanced capabilities (such as smartphones, tablets, and wearables) and the emergence of disruptive technologies that shift the bandwidth usage by altering the way users access the network. With the emergence of new mobile telecommunication standards such as 4G and 5G, consumers are now opting for higher bandwidth applications and services.
Further, the report states that falling growth rate of smartphones will be a challenge for the market. Smartphone shipments are expected to grow at a lower CAGR of around 10% until 2020 in comparison to a previous estimation of more than 11% for the same period. The slow growth rate can be attributed to China, which has joined North America and Western Europe in a more developed growth pattern. However, gradually falling average selling prices will propel steady growth through the end of the forecast period, with global shipments reaching more than two billion units in 2020. China remained the focal point of the global smartphone market in 2015, although the results declined compared to previous years.
AWSC, GCS, WIN Semiconductors, AXT, Century Epitech, Freiberger Compound Materials, Intelligent Epitaxy Technology, IQE, OMMIC, Xiamen Powerway Advanced Material, Qorvo, Sumitomo Electric Semiconductor Materials, UMS¸ Visual Photonics Epitaxy.