Global GaN Devices Market 2016-2020
Silicon has been the preferred choice for computing and electronic devices since its invention almost 50 years ago. However, the constant evolution of technology demands high power and ever greater enhancements in the core semiconductor materials to ensure high performance. GaN has superior properties than silicon such as high breakdown voltage and saturation velocity. The bandgap in GaN is almost thrice the bandgap of silicon. Thus, GaN has the ability to improve power conversion efficiencies, raise power density levels, extend battery lives, and accelerate switching speeds in different end-user segments such as consumer electronics products, telecommunications hardware, electric vehicles, or domestic appliances.
Technavio’s analysts forecast the global GaN radio frequency (RF) devices market to grow at a CAGR of 18.94% during the period 2016-2020.
Covered in this report
The report covers the present scenario and the growth prospects of the global GaN radio frequency (RF) devices market for 2016-2020. The report considers the use of GaN RF devices in different end-user segments such as cellular infrastructure (telecom towers, base stations, telecom infrastructure, and cellular networks); defense sector (military communications, radar, and electronic warfare); CATV (cable television dishes); and others (medical, satellite communications, broadband amplifiers, wired broadband, and ISM band applications).The market is divided into the following segments based on geography:
Technavio Announces the Publication of its Research Report – Global Gallium Nitride (GaN) Devices Market 2016-2020.
Technavio recognizes the following companies as the key players in the global gallium nitride (GaN) devices market: Avago Technologies, Cree, GaN Systems, Infineon Technologies, OSRAM Opto Semiconductors, and Qorvo.
Other prominent vendors in the market are: Nichia, Bridgelux, Efficient Power Conversion, NXP Semiconductors, Panasonic Semiconductors, Toyoda Gosei, and Gallia Semiconductor.
Commenting on the report, an analyst from Technavio’s team said: “Growing prominence of GaN electric vehicle (EV) charger will be one of the major trends in the market”.
According to the report, the growth in automotive industry will be one of the major factors that will drive the growth of the market.
Further, the report states that the growing popularity of GaN-based LED will be one of the major challenges influencing market growth.
Avago Technologies, Cree, GaN Systems, Infineon Technologies, OSRAM Opto Semiconductors, Qorvo, Nichia, Bridgelux, Efficient Power Conversion, NXP Semiconductors, Panasonic Semiconductors, Toyoda Gosei, Gallia Semiconductor.
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