Global Ferroelectric RAM Market 2016-2020
About Ferroelectric RAM
Ferroelectric random access memory (ferroelectric RAM) is a type of solid-state data storage memory which is a medium for computer-related applications. It is a non-volatile memory, which makes it different from the other types of RAM like DRAM that are used in personal computers. Memories are a part of application segment in ferroelectric films including microsystems, and high frequency components (electrical).
Technavio’s analysts forecast the global ferroelectric RAM market to grow at a CAGR of 6.4% during the period 2016-2020.
Covered in this report
The report covers the present scenario and the growth prospects of the global ferroelectric RAM market for 2016-2020. To calculate the market size, the report considers the revenue generated from shipment of F-RAM hardware and software.
The market is divided into the following segments based on geography:
Technavio Announces the Publication of its Research Report – Global Ferroelectric RAM Market 2016-2020
Technavio recognizes the following companies as the key players in the global ferroelectric RAM market: Cypress semiconductor, Fujitsu, IBM, and Texas Instruments.
Other Prominent Vendors in the market are: Infineon technologies AG, LAPIS semiconductor, and Toshiba.
Commenting on the report, an analyst from Technavio’s team said: “The global ferroelectric RAM market is witnessing the trend of increasing investment in R&D by the leading market vendors. Some of the leading vendors like Ramtron, Texas Instruments, and Fujitsu have increased their investment in the R&D of ferroelectric RAM hardware and software. These vendors have identified the huge growth potential of this market, which is motivating them to invest more in R&D, especially for a proper set of technology standards. Moreover, the increase in R&D spending has also improved the performance and efficiency of ferroelectric RAMs, thereby increasing the application areas for these data storage media over a period of time.”
According to the report, low power consumption will be a key driver for market growth. The feature such as low power consumption of ferroelectric RAMs has increased their demand in various battery-driven applications. Ferroelectric RAM is mostly used in battery-powered wireless sensors since it consumes almost 50% less power than other flash memories. This result in an increase in the battery life to a great extent, leading to a reduction in maintenance costs. Here, the vendor gets the advantage as they can compete in the market on the price. Moreover, the lower power consumption also eases the users using the devices integrated with the RAMs as their expenses gets reduced.
Further, the report states that vendors need to focus on all aspects of the ferroelectric RAM from design to final development process in order to increase market acceptance of their products. However, any delay in this process might reduce the market acceptance value of the ferroelectric RAMs, thereby having a negative impact on the overall revenue of the market. Thus, the reduced time to market is one of the major challenges being faced by vendors in the market and is expected to hinder the revenues resulting in the volatile margins.
Cypress semiconductor, Fujitsu, IBM, Texas Instruments, Infineon technologies AG, LAPIS semiconductor, Toshiba.
Learn how to effectively navigate the market research process to help guide your organization on the journey to success.Download eBook