Summary
Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. Silicon carbide is a semiconductor, which can be doped n-type by nitrogen or phosphorus and p-type by beryllium, boron, aluminium, or gallium. Metallic conductivity has been achieved by heavy doping with boron, aluminium or nitrogen.
SiC Substrates is a semiconductor material with unique electrical properties and excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , SiC is more suitable for high temperatureand high power device .SiC Substrates can be supplied in diameter 2 inch , both 4-H or 6-H polytype N-type , Nitrogent doped , and Si face polished. It can be used in GaN epitaxy device, Optoelectronic device, High frequency device, High power device, High temperature device, Light emitting diodes.
Alpha silicon carbide (α-SiC) is the most commonly encountered polymorph; it is formed at temperatures greater than 1700 °C and has a hexagonal crystal structure (similar to Wurtzite). The beta modification (β-SiC), with a zinc blende crystal structure (similar to diamond), is formed at temperatures below 1700 °C. Until recently, the beta form has had relatively few commercial uses, although there is now increasing interest in its use as a support for heterogeneous catalysts, owing to its higher surface area compared to the alpha form.
For now, the main application of silicon carbide substrate in LED solid-state lighting field and high-frequency devices
As the basic material of the third generation semiconductor industry, silicon carbide substrate has a high application prospect and industrial value, and has an important strategic position in the development of China's semiconductor industry. For a long time, the core technology and market of silicon carbide substrate are basically monopolized by developed countries in Europe and the United States, and the larger the product size, the higher the level of technical parameters, the more obvious its technical advantages. China's silicon carbide crystal research only started in the late 1990s, and failed to achieve industrialization due to technical bottlenecks and capacity limits in the early stage of development, which is far behind the international advanced level. Since the beginning of the 21st century, under the support and guidance of the national industrial policy, the development of China's silicon carbide wafer industry has been greatly accelerated. Excellent silicon carbide substrate manufacturing enterprises with independent intellectual property rights such as Tianke Heda and Shandong Tianyue have emerged successively. Domestic enterprises to technology-driven development, deep cultivation of silicon carbide wafer and crystal manufacturing, gradually master 2 inches to 6 inches of silicon carbide crystal and wafer manufacturing technology, break the domestic silicon carbide wafer manufacturing technology gap and gradually narrow the technology gap with the developed countries.
According to APO Research, The global SiC Substrates market was estimated at US$ million in 2025 and is projected to reach a revised size of US$ million by 2031, witnessing a CAGR of xx% during the forecast period 2026-2031.
North American market for SiC Substrates is estimated to increase from $ million in 2025 to reach $ million by 2031, at a CAGR of % during the forecast period of 2026 through 2031.
Asia-Pacific market for SiC Substrates is estimated to increase from $ million in 2025 to reach $ million by 2031, at a CAGR of % during the forecast period of 2026 through 2031.
Europe market for SiC Substrates is estimated to increase from $ million in 2025 to reach $ million by 2031, at a CAGR of % during the forecast period of 2026 through 2031.
The major global manufacturers of SiC Substrates include Cree (Wolfspeed), II-VI Advanced Materials, TankeBlue Semiconductor, SICC Materials, Beijing Cengol Semiconductor, Showa Denko (NSSMC), Hebei Synlight Crystal, Norstel and ROHM, etc. In 2024, the world's top three vendors accounted for approximately % of the revenue.
Report Scope
This report aims to provide a comprehensive presentation of the global market for SiC Substrates, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding SiC Substrates.
The SiC Substrates market size, estimations, and forecasts are provided in terms of sales volume (K Pcs) and revenue ($ millions), considering 2024 as the base year, with history and forecast data for the period from 2020 to 2031. This report segments the global SiC Substrates market comprehensively. Regional market sizes, concerning products by Type, by Application, and by players, are also provided. For a more in-depth understanding of the market, the report provides profiles of the competitive landscape, key competitors, and their respective market ranks. The report also discusses technological trends and new product developments.
Key Companies & Market Share Insights
In this section, the readers will gain an understanding of the key players competing. This report has studied the key growth strategies, such as innovative trends and developments, intensification of product portfolio, mergers and acquisitions, collaborations, new product innovation, and geographical expansion, undertaken by these participants to maintain their presence. Apart from business strategies, the study includes current developments and key financials. The readers will also get access to the data related to global revenue, price, and sales by manufacturers for the period 2020-2025. This all-inclusive report will certainly serve the clients to stay updated and make effective decisions in their businesses.
SiC Substrates Segment by Company
Cree (Wolfspeed)
II-VI Advanced Materials
TankeBlue Semiconductor
SICC Materials
Beijing Cengol Semiconductor
Showa Denko (NSSMC)
Hebei Synlight Crystal
Norstel
ROHM
SK Siltron
SiC Substrates Segment by Inch
4 Inch
6 Inch
8 Inch
SiC Substrates Segment by Application
Power component
RF device
Others
SiC Substrates Segment by Region
North America
United States
Canada
Mexico
Europe
Germany
France
U.K.
Italy
Russia
Spain
Netherlands
Switzerland
Sweden
Poland
Asia-Pacific
China
Japan
South Korea
India
Australia
Taiwan
Southeast Asia
South America
Brazil
Argentina
Chile
Middle East & Africa
Egypt
South Africa
Israel
Türkiye
GCC Countries
Key Drivers & Barriers
High-impact rendering factors and drivers have been studied in this report to aid the readers to understand the general development. Moreover, the report includes restraints and challenges that may act as stumbling blocks on the way of the players. This will assist the users to be attentive and make informed decisions related to business. Specialists have also laid their focus on the upcoming business prospects.
Reasons to Buy This Report
1. This report will help the readers to understand the competition within the industries and strategies for the competitive environment to enhance the potential profit. The report also focuses on the competitive landscape of the global SiC Substrates market, and introduces in detail the market share, industry ranking, competitor ecosystem, market performance, new product development, operation situation, expansion, and acquisition. etc. of the main players, which helps the readers to identify the main competitors and deeply understand the competition pattern of the market.
2. This report will help stakeholders to understand the global industry status and trends of SiC Substrates and provides them with information on key market drivers, restraints, challenges, and opportunities.
3. This report will help stakeholders to understand competitors better and gain more insights to strengthen their position in their businesses. The competitive landscape section includes the market share and rank (in volume and value), competitor ecosystem, new product development, expansion, and acquisition.
4. This report stays updated with novel technology integration, features, and the latest developments in the market
5. This report helps stakeholders to gain insights into which regions to target globally
6. This report helps stakeholders to gain insights into the end-user perception concerning the adoption of SiC Substrates.
7. This report helps stakeholders to identify some of the key players in the market and understand their valuable contribution.
Chapter Outline
Chapter 1: Introduces the study scope of this report, executive summary of market segments by type, market size segments for North America, Europe, Asia Pacific, South America, Middle East & Africa.
Chapter 2: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 3: Detailed analysis of SiC Substrates manufacturers competitive landscape, price, sales, revenue, market share and ranking, latest development plan, merger, and acquisition information, etc.
Chapter 4: Sales, revenue of SiC Substrates in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the future development prospects, and market space in the world.
Chapter 5: Introduces market segments by application, market size segment for North America, Europe, Asia Pacific, South America, Middle East & Africa.
Chapter 6: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 7, 8, 9, 10 and 11: North America, Europe, Asia Pacific, South America, Middle East & Africa, sales and revenue by country.
Chapter 12: Analysis of industrial chain, key raw materials, manufacturing cost, and market dynamics.
Chapter 13: Concluding Insights of the report.
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