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Nanomemory

Published by: Global Industry Analysts

Published: Jul. 1, 2009 - 558 Pages


Table of Contents


I.INTRODUCTION, METHODOLOGY & PRODUCT DEFINITIONS

Study Reliability and Reporting Limitations

Disclaimers

Data Interpretation & Reporting Level

Product Definitions and Scope of Study

II. EXECUTIVE SUMMARY

1.MARKET OVERVIEW

Modern Day Storage Woes

Nanomemory to the Rescue

Table 1: World Long Term Projections for Nanomemory Market- Annual Sales Figures in US$ Billion for the Years 2010 through 2015 (includes corresponding Graph/Chart)

Who Leads the Pack?

Conventional Vs Emerging Storage Options

Comparison Between Traditional and Emerging Memory Types

Nanotechnology to Alter Memory Storage in Electronics

MRAM: Pros and Cons

What’s in Store for MRAM?

Ovonic Memory Gathering Momentum

Holographic Memory in Future

R&D in Nanomemory: A Sneak Peak

Carbon Nanotubes Based Memory

Nanodots

Nanocrystalline Memory

Nano-Ionic Memory

Patent Protection Vital for Investment

Table 2: Number of Patents Filed for Select Nanomemory Types from 2003 Onwards in the US, Japan, Europe, and WIPO (includes corresponding Graph/Chart)

2.PRODUCT OVERVIEW

Nanotechnology: Breaking Conventional Size Barriers

Volatile and Non-Volatile Memory

Nanomemory: An Introduction

Select Nanomemory Types - Features, and Applications

Comparison of Select Nanomemory Technologies- FRAM, MRAM, and Ovonic Unified Memory

FRAM

MRAM

Ovonic Unified Memory

Holographic Memory

NRAM

Molecular Memory

Polymer Memory

3.TECHNOLOGICAL DEVELOPMENTS

Researchers Develop New Nanotube Flash Memory Design

Researchers to Develop Graphene Memory

Physicists Succeed in Controlling Electron Spin

Chemists Develop New Method to Synthesize Nanorods and Nanowires

Researchers Develop Nanowires to Store Data

IBM Develops New Memory Device

KAIST Develops 8nm NVM Flash Memory

University of Southampton Develops Optical Memory Element

Researchers Develop the Largest Memory Bit Array

Physicists Develop Optical Memory Using Single Gallium Nanoparticle

4.PRODUCT INNOVATIONS/INTRODUCTIONS

Toshiba Unveils New 16-Gigabit Memory Chip

Micron Launches 8-Gb SLC high speed NAND

AMD Launches New Stream Processor, AMD FireStream™ 9250

AMD Introduces Two New Graphics Card with TeraFlops Graphics Chip

AMD to Use GDDR5 Memory in New Advanced ATI Radeon™ Graphics Systems

AMD Introduces New Graphics Accelerator, ATI FirePro™ V 8700

AMD Releases New Graphic Processor, ATI Radeon™ E2400

Hitachi Announces Nanotechnology Milestone for Hard Disk Drives Capacity

Ramtron’s New Integrated EDR Incorporates F-RAM Capabilities

Ramtron Unveils New Serial F-RAM with 2Mb Memory

Ramtron Unveils FM3135

Samsung’s Sampling of Smallest-ever 2Gb DDR3 Utilizes 50nm Class Circuiting

Samsung’s New High-Performing Smart Card IC Utilizes 90nm Technology

SanDisk Releases a New WORM Digital Memory Card for Data-Write-Protection

SanDisk’s New Advanced Memory Stick PRO-HG Duo™, Ideal for SLR cameras

Everspin Includes Small Footprint and byte-wide BGA Products into MRAM family

Infineon Technologies Launches X-GOLD™102

Nanochip Unveils a Breakthrough Storage Technology

Ramtron Unveils FM25V05, Serial 512-Kilobit F-RAM

Ramtron Releases High-Speed FM28V100

Ramtron Releases FM25V10, Flexible 1-Megabit Serial F-RAM

Ramtron Enhances Its Range of AEC-Q100-Specified F-RAM Memory Devices

Samsung Introduces First 30nm Flash Memory in the World

Virage Unveils New 65nm Product Lines

RIC Launches 4Mb FRAM

Samsung Launches 8GB Flash Memory

Hewlett-Packard Launches Nanotechnology Based New Computer Chip

Ramtron Unveils 4Mb Non-Volatile FRAM Memory

Samsung Develops a New Chip for Digital TVs

Samsung Launches 8GB moviNAND for Mobiles

Samsung Launches 30nm Process Node Based Primary Flash Memory Chip

Virage Expands the Range of Silicon Aware IP Line

Toshiba Corp to Manufacture NAND Flash Memory Chips with 43nm Technology

Impinj Releases AEON@OTP Nonvolatile Memory Cores

Scientists in South Korea Create the World’s First 8-nanometer Flash Memory Part

Epson and Fujitsu Develop Next-Generation FRAM Technology

Fujitsu Introduces Embedded FRAM for Digital Televisions

Ramtron Extends Grade 1 Automotive Devices Product Range

Ramtron Announces Expansion of +125ºC F-RAM-based Automotive Devices

Ramtron Unveils a New 2Mb Parallel High-Density F-RAM memory device

Ramtron Expands Versa 8051Series by Unveiling a 2 KB F-RAM Microcontroller

Ramtron Expands Nonvolatile State Saver Line by Unveiling a 4-bit F-RAM Device

Ramtron Expands F-RAM-based Grade 1 Automotive parts

FRAM Memory from Ramtron Incorporated in Car Audio Platform by Daesung-Eltec

Ramtron Announces Upgrading of Grade 1 Automotive line

Ramtron Introduces Improved F-RAM-Enhanced™ Processor Companions

Samsung Unveils GDDR5 Memory Chip Transfers data at Speeds of 6Gb/s

Samsung Introduces 64Gb MLC NAND Flash Memory for High Density Storage

Samsung Unveils 60nm 2Gb DDR2 DRAM Using Class Processing Technology

Samsung Introduces a Multi-chip High-Density moviMCP Memory Package

Samsung Commences Sampling of 16Gb NAND Flash Utilizing 50nm Processing Technology

Hitachi and Renesas Launch Circuit Technology for On-Chip Nonvolatile Memory Applications

Hitachi Launches 0.05mm x 0.05mm Contactless RFID IC Chip

Infineon Unveils XE166 Family of Real-Time Signal Controllers

Impinj Releases AEON® for Production in TSMC

Ramtron and TI to Launch 4-Mbit FRAM

5.RECENT INDUSTRY ACTIVITY

Hynix to Acquire Stake in ProMOS

Lockheed Martin Acquires Government Business Unit of Nantero

BAE Systems and MAST to Develop Nano-Sensor Technology

Qimonda Partners with Elpida

SVTC Partners with Nantero

Hynix Partners with Nanosys

Qimonda AG in Partnership with Elpida Memory Inc. to Develop Nano-Chips

Nantero Partners with SVTC Technologies to Develop Carbon Nanotube Process

Aewin Technologies Enters into an Agreement with Ramtron

Numonyx Commences Prototype Production of 45nm Wafers

Hynix to Commence Production of 50nm DRAM

SanDisk to Commence Production of MLC NAND Flash Memory

Crocus Technology Raises Funds to Develop MRAM Technology

Samsung and Sun Microsystems Collaborate on SLC Flash Memory Development

ATMI and Ovonyx to Collaborate on High-Volume Manufacture of PCM Products

SanDisk and Toshiba Co-Develop NAND Flash Memory

Energy Optimizers Enters into an Agreement with Ramtron

Freescale Forms New Company for MRAM Development

Hynix Joins the Memory Technology Access Program (M-TAP) of Nanosys

Toshiba Develops 16-Gigabit NAND Flash Memory

Ramtron International Selects Shanghai Welltech for FM25L16 Designing

AMD Partners with TSMC

TSMC Announces Virage as IP Partner

RIC Partners with TI

Samsung and Toshiba Collaborate on Premium NAND Memory Chips

Ovonyx and Hynix Collaborate on PCM Products Development

Ovonyx and Qimonda Collaborate on PCRAM Technology

IBM, Infineon, Freescale, Samsung & Chartered Cooperate on 32-nm Semiconductors

Spansion Inks Agreement with TSMC

AMD Enters into an Agreement with SAMSUNG

Infineon Enters into an Agreement with IBM

Toshiba to Manufacture 43nm NAND Flash Memory Chips

Samsung Starts Production of 16-gigabit NAND Flash Memory

Samsung Commences Production of 60nm DRAM Chips

Intel Corp Receives Approval for New Computer Chip Plant

NVE Corp to Receive New Patent

Intel to Commence Mass Production of Alverstone

National Semiconductor to Qualify Cavendish Kinetics’ Nanomech Process

Samsung Commences Mass Production of NAND Flash Memory Chips

6.FOCUS ON SELECT GLOBAL PLAYERS

Advanced Micro Devices, Inc. (US)

California Molecular Electronics Corporation (US)

Cavendish Kinetics (US)

Colossal Storage Corporation (US)

Cypress Semiconductor Corporation (US)

Everspin Technologies, Inc. (US)

Fujitsu Limited (Japan)

Hewlett-Packard Development Company, L.P. (US)

Hitachi, Ltd. (Japan)

Honeywell International Inc. (US)

International Business Machines Corp. (US)

Infineon Technologies AG (Germany)

Intel (US)

Nanochip, Inc. (US)

Nanosys, Inc. (US)

Nantero, Inc. (US)

NVE Corporation (US)

Ovonyx, Inc. (US)

Ramtron International Corporation (US)

Samsung Electronics Co., Ltd. (Korea)

SanDisk Corporation (US)

STMicroelectronics NV (Switzerland)

Texas Instruments Inc (US)

ZettaCore, Inc. (US)

III. COMPETITIVE LANDSCAPE

Total Companies Profiled:

Region/Country Players

The United States

Japan

Europe

Germany

The United Kingdom

Rest of Europe

Asia-Pacific (Excluding Japan)

Abstract

This report analyzes the Global Market for Nanomemory in Millions of US$. The types of Nanomemory technologies discussed in the report include: Ferroelectric Random Access Memory or FRAM, Magnetoresitive Random Access Memory or MRAM, Ovonic Unified Memory, Holographic Memory, Nano-RAM or NRAM, Molecular Memory, and Polymer memory. Annual forecasts are provided for the period of 2010 through 2015. The report profiles 40 companies including many key and niche players worldwide such as Advanced Micro Devices, Inc., California Molecular Electronics Corporation, Cavendish Kinetics, Colossal Storage Corporation, Cypress Semiconductor Corporation, Everspin Technologies, Inc., Fujitsu Limited, Hewlett-Packard Development Company, L.P, Hitachi, Ltd., Honeywell International Inc., International Business Machines Corp., Infineon Technologies AG, Intel, Nanochip, Inc., Nanosys, Inc., Nantero, Inc., NVE Corporation, Ovonyx, Inc., Ramtron International Corporation, Samsung Electronics Co., Ltd., SanDisk Corporation, STMicroelectronics NV, Texas Instruments Inc., and ZettaCore, Inc. Market data and analytics are derived from primary and secondary research. Company profiles are mostly extracted from URL research and reported select online sources.

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