GaN RF Market 2008 : Market Research Report

GaN RF Market 2008

Published: Jul. 1, 2008

Glossary
Executive summary
Latest noteworthy news
2007 noteworthy news
2006 noteworthy news
GaN RF device market analysis: Possible applications for GaN devices in RF electronic systems; GaN device applications roadmap. Time to market; Technology drivers and FOM for GaN: High Frequency, High Power and Linearity; GaN RF device market breakdown. 2007 - 2012 comparison; 2005-2012 GaN RF device market size. Nominal scenario; 2005-2012 GaN RF device market size. Table of data: units / ASP / revenues; 2005-2012 GaN RF device market size Alternative pessimistic scenario; Analysis of the 2 scenarios. What can we trust in…?; 4” epi-wafer needs for GaN-based RF devices market 2005-2012; Tentative forecast for RF GaN epiwafer market size 2005-2012; Conclusions and perspectives
GaN HEMT state of the art: GaN and Silicon FET structure comparison; GaN / SiC / Si / GaAs high power RF transistors comparison; Microwave frequencies bands. Comparison of Si, SiGe, GaAs, InP and GaN frequency and Vb ranges; GaN FET state-of-the-art: Company / Technology / Pmax / Gain / Fmax / PAE / Vds / Gate width; Latest GaN RF HEMT results Example of IMEC HEMT GaN/Si Examples of RFMD offer in GaN HEMT (S.I. SiC); Examples of Eudyna offer in GaN HEMT (S.I. SiC); Examples of CREE offer in GaN HEMT & SiC MESFET; Examples of Nitronex offer for GaN HEMT (GaN-on-Silicon); Cost breakdown of HEMT process: GaN/SiC (3”); Cost breakdown of HEMT process: GaN/Si (4”); GaN FET commercialization status & announcements
GaN RF device industrial landscape: Food chain & players in GaN RF business (R&D or production); Industrial supply-chain in the US; Industrial supply-chain in Europe; Industrial supply-chain in Asia; Origin of the companies now involved in GaN technology; Strategy of Si LDMOS companies over the GaN technology
Wireless phone infrastructures: Base stations (BTS) market: Market drivers of the GaN for BTS; Remote radio head (RRH) antenna; Recent announcements in GaN-based technologies for 3G BTS market; Wireless-phone infrastructure market shares in 2007; Si LDMOS vs. GaAs pHEMT 2007 status; Market shares of Si LDMOS vendors for wireless infrastructure in 2007; WCDMA BTS typical cost distribution; Wireless phone base-station price analysis (GSM vs. 3G); Base stations: 2007 value-chain analysis; 2005-2012 mobile-phone subscribers in units and AGR (%) Worldwide deployed macro cellular base-stations 2005-2012 by standards; Components currently used in base stations; Estimation of total accessible market for GaN FET in 3G BTS; Number of 4” equivalent wafers to be produced for GaN FET manufacturing for 3G base stations market (Conservative scenario); Number of 4” equivalent wafers to be produced for GaN devices manufacturing for 3G base stations market (Breakthrough scenario)
Defense market: Market drivers of GaN RF electronics in defense applications; Focus on defense applications Worldwide estimation of the Total Accessible Market (TAM) for wide Bandgap RF transistors; Roadmap for RF transistors volumes in defense applications; 4” equivalent wafers needs in units for GaN MMIC manufacturing for defense market; On-going R&D programs in the US for GaN in defense applications; Example of US DARPA requests: Wide Band Gap Semiconductors for RF Applications (WBGS-RF); On-going R&D programs in Europe for GaN in defense applications: Korrigan
Satellite market: Market drivers of the GaN electronics in SatCom
V-SAT terminals market: Market drivers of GaN electronics in V-SAT; V-SAT market data; GaN HEMT opportunities for V-SAT Estimated 4” wafers annual needs
CATV market: Market drivers of GaN electronics in CATV; CATV market data; GaN HEMT opportunities for CATV. Estimated device volume and 4” epi-wafer needs
WiMAX vs. LTE. The race toward 4G has already started: WiMAX & LTE history and definition; Positioning of WiMAX & LTE over the data rate and the mobility range; WiMAX / LTE technical comparison; WiMAX vs. LTE Current positioning of key companies; WiMAX and LTE deployment planning; WiMAX technology; WiMAX standards; WiMAX profiles/spectrum bands; WiMAX network requirements; WiMAX market trends; WiMAX players; WiMAX players : a complex food chain; WiMAX market estimation 2005-2012 subscribers projection; Market drivers for GaN in WiMAX; What will be the best GaN substrate for base station application ? Si or SiC; Tentative market estimation for WiMAX BTS and related PA & RF transistors market; 2005-2012 worldwide annual volume and related sales for WiMAX BTS infrastructures; 2005-2012 annual production of GaN 4” wafers for WiMAX BTS infrastructures; Conclusions: How WiMAX vs. LTE and related frequency spectrum choices will impact the GaN RF market?
GaN RF devices. European developments: European industrial food chain; Korrigan : the key R&D GaN military project in Europe; HYPHEN: Hybrid Substrates for Competitive HF Electronics; GaN-Switchmode: GaN HEMT for base stations; Power RF foundries in Europe
GaN RF devices. Japanese developments: Japanese NEDO R&D programs
GaN material. Current developments: Direct growth or buffer approach; Composite substrates: wafer bonding approach; Picogiga SOITEC (F). SopSiC (Silicon on Poly-SiC) substrate; Aonex Technologies, now AmberWave Systems (US) A-Sapph & A-GaN; BluGlass. GaN on Glass; IMEC (B). GaN on Germanium. Ge (111); IMEC (B). GaN on Silicon; Azzurro Semiconductors (D). GaN on Silicon; Covalent Materials (J). GaN on Silicon (with 3C-SiC buffer layer); Nitronex (US). GaN on Silicon; TDI, now Oxford Instruments (US). GaN/SiC and GaN/Sapphire; Hitachi Cable (J). GaN/SI.I SiC and GaN/Sapphire; Cermet (US). GaN on ZnO; SOD: Silicon On Diamond. Main advantages for GaN growth (1/2); Group4 Lab (US). GaN/Diamond. Double wafer bonding approach; sp3 Diamond Technology (US). DOS (Diamond on Si) & SOD; Bulk / free-standing GaN wafers status; GaN / Silicon epiwafer manufacturers status; GaN/Sapphire & GaN/SiC epiwafer manufacturers status; Examples of current GaN material pricing
Main metrics of the SiC and Sapphire substrate markets: Main SiC material manufacturing site locations. Bulk or epi-foundry; Material polytypes, doping & orientation commercially available; 2006 & 2007 SiC substrate vendor revenues & related market share. Focus on S.I. SiC market; Diameter evolution for semi-insulating SiC substrates to 2012; 2005-2012 S.I. SiC substrates price evolution for various diameters; Map of sapphire suppliers location 2007 Total sapphire vendor revenues (split by Optics & Electronics); 2005-2012 sapphire substrate price projection, split by diameter
Review of the main GaN RF devices in production or in development: (Device structure, Main specs, Reliability, …): CREE; Eudyna; Freescale; Fujitsu; KOPIN; Matsushita MEI / Panasonic; NEC; Nitronex; OKI; RFMD; TriQuint; Toshiba; UCSB

Abstract

The need for high power, high frequency transistors is increasing steadily, commensurate with the huge demand for wireless telecommunications. More power, more frequency bands, better linearity and improved efficiency are driving the current development of RF semiconductor devices capable of handling all these specifications at a reasonable price.

Up to 2005, Si LDMOS covered about 90% of the high power RF amplification applications in the 2GHz and higher frequency range; the 10% remaining market share was addressed by GaAs pHEMT technology. This equilibrium is soon to be upset considerably by the introduction of Gallium Nitride (GaN) HEMT technology.

These GaN devices are now challenging the dominant position of silicon in an industrial playground in which a Power Amplifier (PA) market size of ~$900M is forecast for 2008.

Military applications were the first to use WBG devices, especially with the SiC MESFET being developed through broadly financed DARPA and DoD programs in the US. Then in 2006, Eudyna jointly announced with NTT that a first 3G network using GaN HEMT had been deployed in Tokyo for test purposes. New commercial offerings from CREE, RFMD and Nitronex followed, targeting both base-station (3G, WiMAX...) and general purpose applications. In parallel, R&D for space applications remains very strong and the first products are expected to be implemented in the next few years. Recent announcements show that key players are more and more focusing on WiMAX/LTE markets, defocussing on the current 3G/3G+ market for which they claim the time-to-market for WBG devices is now over. With strong penetration of WiMAX/LTE applications, we forecast that the market size for GaN RF transistors could reach a level of about $100m by 2010. The duality between WiMAX and LTE technologies should not widely impact this growth. The battle will take place not only at a performance and reliability level but also at the cost level. Thus, innovative GaN-based substrate makers have a great role to play to help decrease device prices.

This report provides a complete analysis of the applications targeted by GaN RF transistors with its key market metrics. It describes the main devices in production or under development as well as the possible alternative substrates that will help to decrease the device price.

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GaN RF Market 2008

Table of Contents

Abstract