SiC’ 08 Silicon Carbide Market: from material to systems : Market Research Report

SiC’ 08 Silicon Carbide Market: from material to systems

Published: Dec. 1, 2007 - 248 Pages

Glossary
Executive summary
Market projection for SiC devices in various applications 2005-2015: 2007 noteworthy news; 2006 noteworthy news; Who¡¯s new on the market place since 2005 ?
SiC market segmentation and opportunities in the Silicon world: Positioning of the SiC devices in the Silicon world; Silicon vs. SiC device characteristics ¡°Reality of silicon & expectations of SiC¡±; Possible applications for SiC devices in power electronics; SiC device applications roadmap; Main applications accessible to SiC Specs / market data of today silicon devices; Estimated accessible markets, growth rate, and time to market for SiC based power; electronics; Status of SiC-based devices in 2006; 2006 Top-20 power electronics company revenues; 2006 Top-20 company main products; 2004-2009 estimation of the 600+ volts silicon IGBT market size: the SiC switch T.A.M.; 2004-2009 estimation of the 60+ volts silicon MOSFET market size: the SiC diode T.A.M.; 2006 silicon IGBT market shares per revenues; 2004-2009 estimation of the 500+ volts silicon rectifiers (diode + Schottky) market size:; the SiC diode T.A.M.¡¦; Silicon rectifiers 2006 company market share per revenues; Conclusion
SiC industry outlook: Main SiC fabs in Europe; Main SiC labs in Europe; Main SiC fabs in the US; Main SiC fabs in Japan; Main SiC fabs in Asia (Apart of Japan); Some recent strategies and choices for power devices technology; Research Programs. France: G2REC; Research Programs. Europe: MANSiC; Research Programs. Japan: Development of Inverter Systems for Power Electronics
Power Factor Corrector Market: Introduction; Power supply market analysis: The PFC T.A.M.; PFC market main metrics; SiC vs. Silicon diodes; SiC main added-value in a PFC circuits; PFC efficiency comparison as a function of junction T¡Æ and Schottky diodes type (Si, SiC and GaN); Comparison of Si, SiC or GaN diodes cost in a PFC module; TOP 15 OEM power supply manufacturers and related involvement in SiC; SiC device main market requirements for PFC applications; SiC Schottky diodes 2006 market status; SiC Schottky diodes manufacturing metrics; 2006 SBD cost breakdown model From 3¡± wafer to 6A packaged dies; From SiC epi-ready wafers to marketed devices; 2006 n-type SBD added-value analysis (lot > 100 substrates); 2010 SBD cost breakdown model projection From 4¡± wafer to 6A packaged dies; Roadmap for Schottky ASP 2002 - 2012; SiC Schottky diodes Devices specs roadmap (R&D); 2005-2012 SiC Schottky diodes market forecasts in units and revenues for PFC; 2003-2012 SiC Schottky diodes wafers consumption for PFC business; 2003-2012 substrate market value for SiC Schottky diodes in PFC business; Current SiC SBD available products; Conclusion and perspectives
The HEV market: Why SiC in cars ?; Projection of market shares of EV, HEV & FCV over ICE to 2020; Sales projection for HEV to 2015 in million units; 2002-2012 Power semiconductors market size in passenger cars; Current device technologies in use; 2 key power modules: DC-DC boost converter and DC-AC inverter; Expected improvements of SiC introduction in HEV; The TOP 5 key requirements for power transistors in HEV (according to Toyota); Roadmap for operation voltage in HEV; Industrial food chain and typical market prices from modules to power train; Added value analysis of SiC electronics for HEV: fuel consumption and money savings; Overview of Toyota HEV power module; HEV current inverter module cost breakdown; Silicon vs. SiC HEV inverter cost breakdown; Sales volume projection for SiC diodes and transistors in automotive applications; Sales revenues projection for SiC diodes and transistors in automotive applications; 4¡± SiC substrate volume projection for SiC devices in HEV; Conclusion: perspective for SiC devices in the HEV
UPS (Uninterrupted Power Supply) market: Global UPS market: Market value, main uses and worldwide consumption; UPS vendors market shares; UPS products segments; UPS architectures examples; 2006-2015 SiC device market forecasts in UPS applications; 2006-2015 SiC substrate market forecasts in USP applications; Conclusion: SiC success chances in the UPS segment
Industrial motor AC drives market: AC drives applications; Motor drives history; AC drives market generalities; 2006-2012 projection for AC drives market as a function of power range; AC drives market shares; Less than 10 % of electric motors in the world are fitted with an AC drive.; AC drives Total Accessible Market Volumes; Table of contents
Industrial motor AC drives market (ctn¡¯d): AC Drives Supply-Chain; AC drives electronic architecture; SiC in AC drives: Results from Rockwell Automation; SiC in AC drives: Others initiatives; Total Accessible Market for SiC in AC Drives; 2006-2015 SiC device market forecasts in AC drive applications; 2006-2015 SiC substrates market forecasts in AC drive applications; Conclusion: Success chances for SiC in drives applications
Wind Power Market. Converters for wind turbines: Annual installed capacity forecast; Annual installed capacity geographical breakdown; Wind turbine architecture; Wind turbine generators and power converters; Variable speed wind power electrical characteristics; Variable speed wind turbine inverters; Variable speed wind turbine inverters; Industrial food chain; TOP-10 Wind turbine suppliers in 2006; Wind turbines market trends; AC-AC converter annual needs (units); Main market drivers for SiC in wind power field; Industry involvement with SiC; Conclusions
Inverters for solar panels: Electric parameter of solar cells; Solar market segmentation; Annual production of solar cells in GW, breakdown by technology; 2005-2015 solar installation price evolution in $/W; Inverter module key parameters; Cost breakdown of a solar installation and inverter cost in $/kW; Solar inverter nominal power; Electrical features; Trends in PV voltage; Electronic devices in PV inverters; Solar inverter main manufacturers; Conclusions
SiC substrates market: State-of-art in SiC crystal growth; SiC material type vs. applications; From powder to SiC epi-ready wafers Sublimation (PVT) technique; SiC crystal growth techniques comparison table; Main SiC material manufacturing site locations Bulk or epi-foundry; 2006 estimated SiC substrates monthly production (2¡± equ.); Material polytypes, doping & orientation commercially available; 2006 SiC substrate vendors market shares; SiC epi-house and epi-service offers; Wafers diameter evolution in production for Power Electronics; Wafers diameter evolution in production for HB-LED; Wafers diameter evolution in production for GaN/SiC RF devices; 2004-2012 SiC row substrates price evolution for various material types; Average $/mm©÷ price for SiC row substrates; Examples of current SiC wafer price; Estimation of the CREE captive SiC substrates market for LED; Sublimation reactors yield; SiC epitaxy: typical process time; Overview of SiC epi-reactors installed-base (non-exhaustive list); 2005-2015 forecasts for SiC substrates market in power electronics; Conclusion: Where and what to sell, epi or bulk?
SiC Device Technologies: $/mm©÷ process cost for SiC substrate, SBD and FET; SiC component costs breakdown comparison: 2006 status; SiC power devices:; chips size and power density (2006); Current density; SiC material price pushes for high A/mm©÷; Current density (A/mm©÷) roadmap for SiC devices in production; SiC switches: who is active?; SiC MOSFET Transistors; MOSFET Transistors; Companies involvement; 2010 MOSFET cost breakdown model projection; From 4¡± wafer to 1200V/100A packaged dies; Tentative forecast for FET structure $/mm©÷ evolution; Silicon vs. Silicon Carbide MOSFET; Silicon vs. Silicon Carbide MOSFET; SiC MOSFET: state-of-the-art; Example of product :; Cree : 350V, 10A 4H-SiC Power MOSFET; Example of product :; Rohm : 900V; 7.15m§Ùcm©÷ Power MOSFET; Example of company roadmaps Renesas: 500V and beyond MOSFET; SiC Bipolar diodes (PiN); SiC PiN diodes: state-of-the-art; Exemple of device:; Cree 8.6 kV, 4H-SiC PiN Diode; SiC JFET state-of-the-art; SiC BJT: state-of-the-art
General conclusion
Company profile: CREE
Annexes: HEV market and inverter technology, SiC power converter demonstrators, GaAs; Schottky diodes

Abstract

The release of an SiC switch will launch this market and drive new developments in the automotive, industrial and IT fields. A $800M device market is thus forecasted by 2015.

It is now clear that the relative stagnation of the SiC power device market is partially due to a lack of reliable transistor technology. PFC business is the only one driving SiC device sales and the perspective for higher market penetration is mainly linked to decreasing device cost. Others applications are requesting a complete SiC switching cell (diode and transistor).

MOSFET has been investigated by major SiC R&D teams, but it seems more and more certain that JFET or BJT technologies may be released first on the market. With an expected SiC switch introduction by 2010, we forecast that SiC electronics can easily generate $800M revenues by 2015.

With the recent introduction of 4” diameter SiC material coupled with the ZMP® (Zero MicroPipe) technology acquired from IntrinSiC, US based Cree is now marketing a product able to fit with the power device makers main requirements. However, few of them have already entered in the production phase, and with the exception of Cree, Infineon and newcomer STMicroelectronics, no other player is commercially active in this segment.

SiC material cost and low diameter has always been mentioned as a restraint to justify low interest from the big names of this industry. So, now that these 2 parameters are getting solved, the truth is out there and certainly not so far away from the switch…

SiC device business is not yet the most exciting money-maker activity. We estimate the SiC-based power electronic devices 2006 sales should have generated something around $15 million revenues. The only product commercially available is Schottky diode (SBD), now reaching 1200V and 20A range. This component is targeting numerous possible applications but is mostly used in high-end PFC (Power Factor Corrector) systems where it brings some impressive addedadded value like better power oscillation avoidance and removal of numerous passive discrete components.

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SiC’ 08 Silicon Carbide Market: from material to systems

Table of Contents

Abstract