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"PowerSiC 06": Status & Forecasts Silicon Carbide Devices for Power Electronics MarketPublished by: Yole Developpement Published: Jun. 1, 2006 - 131 Pages Table of ContentsPowerPoint Presentation Email from Publisher
2003->2005: Power MOSFETs are pushing in UK) AbstractRecent developments in SiC MOSFETs and other switches open the door of new coming applications. With the latest Rohm announcement of RBonB = 3.1 mO.cm², MOSFETs are coming out the labs struggling with best silicon trench-MOS currently available. It is now possible to envisage full-SiC power modules. Others challengers on MOSFETs are Mitsubishi Electric, Denso, Philips, Semisouth,This will go with the implementation of new SiC-based converters and inverters. SiC will allow a dramatic reduction in size and weight along with an improvement of power conversion. Electric motor drivers are the first seen applications in both the industry and the hybrid automotive fields. In 2016, 5 millions hybrid cars could benefit from SiC devices. First power-module prototypes are going out of R&D labs, as shown by Kansai Electric and Cree or MELCO. Solar and wind power players are starting to look at these components as well. 2005 has seen the involvement of new playersin SiC power devices business like Rohm, Inter-national Rectifier, ST Microelectronics, and Philips in collaboration with Chalmers University. Even if SiC Schottky diodes are offering sharp improvements over silicon-based diodes, it deals with a complete re-design of the power supply. This leads to a slow market penetration, starting with high-end devices and now migrating to mid-end applications. We forecast the devices market will reach about $50M by 2010 for the Schottky business. The target price for such a component is expected to decrease down to 0.2$/Amp but the current level is still laying at ~0.45$/Amp. We forecast PFC will handle a ~$100M SiC devices market in 2012. Get Full Details About This Report >> |
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