|
|
| Infineon and STM icroelectronics are sharing 90% of
the market, leaving Vishay, Fairchild, Toshiba and
all the new comers struggling for the remaining pieces
(still $50M
). However, the market is being attacked by
new comers: Fairchild & Toshiba in 2004, then Vishay in
2010, followed by Renesas, Fuji Electric, Alpha Omega
Semiconductor, Hua-hong NE C and probably others very
soon. This picture is to change as market size will nearly
double within the next 5 years. First CoolMO S® was released back in 1998 by Infineon. It broke what had been the “silicon limit” for key device performance parameters (RdsON per area), and competitors took time to develop and make their own solution commercially available, such as STM icroelectronics who released its MD mesh® in 2000. While waiting for the performance improvements promised for a long time by compound semiconductor devices, system manufacturers keep pushing for improvements in Silicon devices at the lowest cost possible. SJ MO S is one of the solutions proposed today. Please note: this is delivered as a PowerPoint presentation. |
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