In the near future, floating gate NAND flash will encounter fundamental scaling limitations. A variety of technologies including Toshiba’s BiCs, Samsung’s VG-NAND, Macronix’s BE-SONOS, Hynix's Vertical Cylindrical FG, SanDisk’s 3D Memory and Intel/Micron’s PCMs (stackable PCM) offer the promise of continued increases in storage capacities and lower cost per bit necessary to enable new and emerging data storage applications.
What’s after NAND? Provides an in-depth analysis of the post-planar floating gate NAND flash options and an independent assessment of the viability of these technologies going forward...
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- CONTENTS
- LIST OF FIGURES
- LIST OF TABLES
- EXECUTIVE SUMMARY
- INTRODUCTION
- NAND FLASH MEMORY
- NAND Flash Memory Technology
- Floating Gate Memory Cell Scaling Challenges
- Program Voltages and WL-WL Dielectric Breakdown
- Number of Floating Gate Electrons, Charge Cross-talk, and Random Telegraph Noise
- IPD Scaling of Electrical Thickness and Program Saturation: Can a Planar Cell be a Solution?
- NAND alternative: Charge Trapping Memory Cell
- 3D MEMORY ALTERNATIVES
- Conventional Approach
- Samsung Stacking by Single Crystal Deposition
- Concept
- Advantages and Disadvantages
- Challenges
- Nonconventional approach
- Horizontal channel - horizontal gate
- Concept
- Advantages/Disadvantages
- Challenges
- Vertical gate - Macronix TFT - Samsung VG-NAND
- Concept
- Advantages/Disadvantages
- Challenges
- Vertical Channel - Punch Structure
- Toshiba BiCS
- Concept - 1st Generation
- Advantages and Disadvantages
- Concept - 2nd Generation ' p-BiCS structure
- Challenges
- Samsung TCAT
- Concept
- Advantages
- Disadvantages
- Challenges
- Hynix Vertical Cylindrical Floating-gate
- Concept
- Advantages
- Disadvantages
- Challenges
- Vertical Channel - Channel Wrap-around Structure
- Samsung VSAT - Vertical Stacked Array Transistor
- Concept
- Advantages
- Disadvantages
- Challenges
- Cross-point Memory Arrays
- Concept
- Switching elements and storage effects
- Stackable cross-point structure and 3D integration
- Advantages/Disadvantages and Challenges
- COMPARISON OF 3D MEMORY CONCEPTS
- Cell Size
- Disturbs
- Process Complexity
- Cell Efficiency
- Yield
- Performance
- Endurance
- Retention
- Power Consumption
- Scalability
- Cost
- Summary
- OUTLOOK
- Roadmap (2010-2020)
- REFERENCES
- ABOUT THE AUTHORS
- ABOUT NAMLAB
- Contact
- ABOUT FORWARD INSIGHTS
- Services
- Contact
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